Vibration rectification in silicon MEMS accelerometers converts out-of-band mechanical excitation into direct current bias shifts through non-linear flexure stiffness, capacitive gap dynamics, and signal-chain clipping.
Borosilicate hermetic capacitive sensors exhibit non-Fickian hydration drift and mechanical swelling offsets that require kinetics modeling to hold tolerances.
Matching element strain coefficients to substrate thermal expansion eliminates thermal hysteresis and holds sub-ppm resistance stability across operational temperature bands.
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