
Silicon Substrate Thermal Expansion Mechanics in Micro Inertial Sensors
Silicon substrate thermal expansion alters MEMS structural spacing and compliance, requiring isolated single-point anchors and 3rd-order ASIC polynomial correction.

Silicon substrate thermal expansion alters MEMS structural spacing and compliance, requiring isolated single-point anchors and 3rd-order ASIC polynomial correction.

Evaluating tactical IMU thermal gradient response requires measuring dynamic bias shifts during rapid thermal ramps rather than steady state isothermal soak points.
Silicon substrate expansion mismatches create stress across MEMS structures, driving zero-g drift that demands isolated anchors and hysteresis modeling.
Substrate thermal expansion creates packaging shear stress that warps MEMS proof masses, demanding central single-anchor isolation and polynomial offset calibration.
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