Wafer-level packaging stress relaxation induces anisoelastic stiffness drift and quadrature leakage, requiring stabilization annealing to hold tactical bias limits.
Modeling die stress hysteresis in capacitive accelerometers requires mapping non linear viscoelastic adhesive relaxation directly to comb gap displacement.
Micro-strain relaxation in MEMS silicon transducer die-attach and packaging interfaces causes long-term zero drift that invalidates ASIC polynomial calibration.
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