Structural Drift
Microscopic deformation occurs in semi conductor sensing elements when they are subjected to sustained mechanical stress over long periods. Engineers monitor silicon diaphragm creep because it causes a slow and predictable shift in the sensor baseline. This phenomenon is a result of the molecular rearrangement within the crystal lattice under high pressure load and it must be accounted for during the data post processing stage.
Stress Hysteresis
Returning to a zero load state does not always restore the original output of the instrument immediately. Physical effects related to silicon diaphragm creep mean that the sensor might retain a slight offset for several hours after surfacing. This delay complicates the calibration of sensors used in tidal or cyclic applications.
Zero Drift
Long term stability in depth measurements depends on the ability to account for these minute changes in material shape. Compensating for silicon diaphragm creep involves the use of aging processes during manufacture to stabilize the crystal structure.
Performance Lifecycle
Transducers eventually reach a point where the accumulated deformation exceeds the allowable tolerance for the application. Tracking the silicon diaphragm creep over years of service provides a reliable indicator for the replacement of the sensing unit.
