Structural Measurement
Dimensional and mechanical inspection protocols verify microscale structural geometries during sensor fabrication. Microelectromechanical systems metrology measures etching depths, film stresses, membrane thickness, and structural anchor alignment across micro-fabricated wafers. Geometric precision dictates mechanical resonance frequencies and spring constants in silicon transducers.
Optical interferometry profiles three-dimensional surface topography without physical contact.
Optical Inspection
White-light interferometers and laser doppler vibrometers quantify dynamic deflection profiles under electrical excitation. Scanning electron microscopy inspects high-aspect-ratio trench sidewalls for micro-masking defects. Standoff optical measurements prevent physical damage to fragile suspended mechanical structures.
Film stress metrology calculates residual stress from wafer curvature changes measured before and after film deposition. Dimensional variances of one hundred nanometers alter mechanical stiffness in micro-beams significantly. Automated wafer-handling tools protect released structural membranes during high-throughput inline inspection steps.
Fab Verification
Calibration standards with certified step heights validate optical profilometer vertical displacement measurements. Wafer-level probe stations apply combined electrical and pneumatic stimuli to test sensor diaphragm deflection. Standardized test structures integrated into wafer scribe lines provide proxy measurements for mechanical yield tracking.
Calibration drift in optical displacement sensors degrades structural measurement accuracy across production lots.
Resolution Limit
Diffraction limits restrict optical metrology resolution when inspecting sub-micron structural features. Features smaller than half the optical wavelength require scanning probe microscopy or electron beam inspection. Optical measurement models fail when structural feature sizes approach physical diffraction limits.