Parasitic Triggering
Specification of electrical failure in a CMOS device happens when an unintended low-impedance path forms between the power supply and ground. An interrupt latchup occurs specifically when a transient voltage spike on an input pin or a power rail triggers the internal parasitic bipolar transistors. Once these structures activate, they create a self-sustaining current loop that persists until the power is removed.
Mechanism Path
The silicon substrate contains p-n-p-n structures that behave like a silicon controlled rectifier. When an interrupt latchup activates this path, the resulting current surge can melt the internal metal traces. This condition usually stems from an overvoltage event that pushes carriers into the well of the transistor.
Qualification Standard
Qualification laboratories follow standards such as JEDEC JESD78 to verify the immunity of a design. The test involves injecting a specific current into the pins while monitoring the supply current for a sudden increase. A device that withstands these pulses without triggering an interrupt latchup meets the requirement for industrial or automotive applications.
Protection Method
Designers place guard rings around sensitive nodes to collect the stray carriers before they reach the parasitic structures. Physical layout separation prevents an interrupt latchup from forming under normal operating stresses.